| PART |
Description |
Maker |
| IS43R16160-6TL |
Auto refresh and Self refresh
|
Integrated Silicon Solu...
|
| HM51W18165J-5 HM51W18165J-6 HM51W18165J-7 HM51W181 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
|
Hitachi Semiconductor
|
| IS42SM32100D IS42VM32100D |
Auto refresh and self refresh
|
Integrated Silicon Solu...
|
| HM5117405LS-5 HM5117405LS-6 HM5117405LS-7 HM511740 |
16 M EDO DRAM (4-Mword 垄楼 4-bit) 4 k Refresh/2 k Refresh
16 M EDO DRAM (4-Mword ′ 4-bit) 4 k Refresh/2 k Refresh
|
Elpida Memory
|
| HM5164805FTT-5 HM5165805FTT-5 HM5164805FTT-6 HM516 |
64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh
64 M EDO DRAM (8-Mword ? 8-bit) 8 k Refresh/4 k Refresh
64 M EDO DRAM (8-Mword 隆驴 8-bit) 8 k Refresh/4 k Refresh
|
http://
Elpida Memory
|
| KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns
|
Samsung Electronic
|
| AS4SD8M16DG-75/IT |
Self Refresh Mode
|
Micross Components
|
| IS45S86400F IS42S86400F |
8K refresh cycles every 64 ms
|
Integrated Silicon Solu...
|
